METAL SINGLE CRYSTAL IN WHICH METAL ELEMENT IS SUBSTITUTED
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United States of America Patent
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Oct 15, 2015
app pub date -
Sep 17, 2013
filing date -
Sep 21, 2012
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Abstract
The present invention relates to a metal single crystal in which a metal element is substituted, wherein a metal element A is doped with a metal element B different from the metal element A to form A1-XBX, and a mixed single crystal is formed therefrom by high temperature melting (wherein the metal element A is any one of silver, copper, platinum and gold; the metal element B is any one of silver, copper, platinum and gold; and 0.01≦x≦0.09). Therefore, a metal single crystal, which is a mixed crystal with more superior electrical properties than a conventional metal, is formed by doping a metal with excellent electrical properties with a metal element different from the metal, and growing the doped metal into a mixed crystal.
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