Semiconductor device having gate in trenches
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United States of America Patent
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May 22, 2018
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N/A
app pub date -
Apr 9, 2014
filing date -
Apr 9, 2014
priority date (Note) -
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Abstract
A semiconductor device is disclosed. The semiconductor device includes a substrate having an isolation region and an active region defined by the isolation region. At least one trench is formed in the active region and extends along a first direction. A gate layer is disposed on the active region and extends along a second direction, wherein the gate layer conformably fills the at least one trench and covers a bottom surface and sidewalls of the at least one trench. The disclosure also provides a method for manufacturing the semiconductor device.
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