Substrates Including Gallium Nitride Layers and a Method of Producing the Same
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United States of America Patent
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Jun 30, 2015
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Dec 20, 2013
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Abstract
In a substrate having a gallium nitride layer, surface damage after surface treatment of the gallium nitride layer is reduced and quality of a functional device formed thereon is improved. A substrate 4 having at least a gallium nitride layer 4 is provided. A plasma etching system equipped with an inductively coupled plasma generating system is used and a fluorine-based gas is introduced at a standardized direct current bias potential of −10V/cm2 or higher to subject a surface 3a of the gallium nitride layer to dry etching treatment.
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