Method of Forming Tungsten Nitride Layer of Tungsten Gate
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United States of America Patent
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Oct 22, 2015
app pub date -
Mar 27, 2015
filing date -
Apr 21, 2014
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Abstract
A method for manufacturing a semiconductor device includes providing a front-end device containing a dummy gate, removing the dummy gate, and forming a gate structure including a tungsten gate in a location previously occupied by the dummy gate that has been removed. The method also includes etching back a portion of the tungsten gate, forming a laminate structure having at least one layer of tungsten and one layer of tungsten nitride on the etched back tungsten gate, and forming a silicon nitride cap layer on the laminate structure.
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