PASSIVATED UPSTANDING NANOSTRUCTURES AND METHODS OF MAKING THE SAME
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United States of America Patent
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May 5, 2015
filing date -
Sep 4, 2008
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Abstract
Described herein is a device comprising: a substrate; one or more of a nanostructure extending essentially perpendicularly from the substrate; wherein the nanostructure comprises a core of a doped semiconductor, an first layer disposed on the core, and a second layer of an opposite type from the core and disposed on the first layer.
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