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Abstract

Photovoltaic semiconductor structures, photovoltaic base structures for forming tandem photovoltaic cells, and methods of fabrication thereof, are provided, in which at least one tunnel junction layer is integrally formed within a semiconductor substrate via a shallow diffusion doping process. In some embodiments, two tunnel junction layers are formed within a common semiconductor substrate having a photovoltaic homojunction therein, such as silicon or germanium, via a two-step shallow diffusion doping process. In other embodiments, a first tunnel junction layer is formed within a semiconductor substrate having a photovoltaic homojunction via a shallow diffusion doping process, while a second tunnel junction layer is formed by an epitaxial or other additive process. In other embodiments, photovoltaic semiconductor structures are provided having an emitter layer and a first tunnel junction layer formed as a composite layer having a graded profile within a semiconductor substrate.

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First Claim