PHOSPHOROUS-CONTAINING COPPER ANODE FOR ELECTROLYTIC COPPER PLATING, METHOD FOR MANUFACTURING SAME, AND ELECTROLYTIC COPPER PLATING METHOD
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United States of America Patent
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Oct 29, 2015
app pub date -
Jan 7, 2011
filing date -
Jan 12, 2010
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Abstract
Provided are a phosphorous-containing copper anode for electrolytic copper plating, a method for manufacturing the same, and an electrolytic copper plating method using the phosphorous-containing copper anode. The phosphorous-containing copper anode obtains a crystal grain boundary structure having a special grain boundary ratio LσN/LN of 0.4 or more. LN is a unit total special grain boundary length corresponding to a unit area of 1 mm2 obtained by converting a total grain boundary length L. LσN is a unit total special boundary length corresponding to a unit area of 1 mm2 obtained by converting a total special grain boundary length Lσ. By having the configuration described above, a black film is formed evenly on the copper anode at the early stage of the electrolytic copper plating. Plating defect can be reduced by preventing the black film being fallen.
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