METHOD OF PREPARING A SUBSTRATE FOR NANOWIRE GROWTH, AND A METHOD OF FABRICATING AN ARRAY OF SEMICONDUCTOR NANOSTRUCTURES
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United States of America Patent
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Issued Date -
Oct 29, 2015
app pub date -
Apr 21, 2015
filing date -
Apr 25, 2014
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Abandoned
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Abstract
The present invention provides a reproducible preliminary in-situ oxide removal step for patterned self-assisted III-V semiconductor nanowire growth. Here “in-situ” means located within the same treatment environment or apparatus as the nanowire growth process, e.g. with a molecular beam epitaxy (MBE) apparatus or the like. Providing an in-situ process may prevent the formation of a thin oxide layer during transfer of the substrate into the nanowire growth apparatus.
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