DEEP WELL PHOTODIODE FOR NIR IMAGE SENSOR
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United States of America Patent
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Oct 29, 2015
app pub date -
Apr 28, 2014
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Apr 28, 2014
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Abstract
An active pixel image sensor includes a photodiode structure which enables high near-infrared modulation transfer function and high quantum efficiency, with low pinning voltage for a medium- to large-size pixel. The photodiode includes a shallow photodiode region and a deep photodiode region both of a first dopant type, where the length of the shallow photodiode region is larger than the length of the deep photodiode region; and a shallow depleting region and a deep depleting region both of a second dopant type. The deep depleting region surrounds the deep photodiode region on at least two opposite sides.
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