Methods of forming a memory cell material, and related methods of forming a semiconductor device structure, memory cell materials, and semiconductor device structures

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United States of America Patent

PATENT NO 9735359
SERIAL NO

14259556

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Abstract

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A method of forming a memory cell material comprises forming a first portion of a dielectric material over a substrate by atomic layer deposition. Discrete conductive particles are formed on the first portion of the dielectric material by atomic layer deposition. A second portion of the dielectric material is formed on and between the discrete conductive particles by atomic layer deposition. A memory cell material, a method of forming a semiconductor device structure, and a semiconductor device structure are also described.

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Patent Owner(s)

  • MICRON TECHNOLOGY, INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Sandhu, Gurtej S Boise, US 1217 32434
Smythe, John A Boise, US 47 798

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