Phase change memory stack with treated sidewalls

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 10381072
APP PUB NO 20150318038A1
SERIAL NO

14266456

Stats

ATTORNEY / AGENT: (SPONSORED)

Importance

Loading Importance Indicators... loading....

Abstract

See full text

Memory devices and methods for fabricating memory devices have been disclosed. One such method includes forming a memory stack out of a plurality of elements. A sidewall liner is formed on a sidewall of the memory stack using a physical vapor deposition (PVD) process, including an adhesion species and a dielectric, such that the adhesion species intermixes with an element of the memory stack to terminate unsatisfied atomic bonds of the element and the dielectric forms a dielectric film with the adhesive species on the sidewall.

Loading the Abstract Image... loading....

First Claim

See full text

Family

Loading Family data... loading....

Patent Owner(s)

  • MICRON TECHNOLOGY INC.

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chan, Tsz W Boise, US 16 170
Hu, Yongjun Jeff Boise, US 163 1136
McTeer, Everett Allen Eagle, US 25 170
Petz, Christopher W Boise, US 40 116

Cited Art Landscape

Load Citation

Patent Citation Ranking

Forward Cite Landscape

Load Citation

Maintenance Fees

Fee Large entity fee small entity fee micro entity fee due date
7.5 Year Payment $3600.00 $1800.00 $900.00 Feb 13, 2027
11.5 Year Payment $7400.00 $3700.00 $1850.00 Feb 13, 2031
Fee Large entity fee small entity fee micro entity fee
Surcharge - 7.5 year - Late payment within 6 months $160.00 $80.00 $40.00
Surcharge - 11.5 year - Late payment within 6 months $160.00 $80.00 $40.00
Surcharge after expiration - Late payment is unavoidable $700.00 $350.00 $175.00
Surcharge after expiration - Late payment is unintentional $1,640.00 $820.00 $410.00