Method and apparatus for laser dicing of wafers

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United States of America Patent

PATENT NO 9636783
SERIAL NO

14265672

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Abstract

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A method includes cutting a semiconductor wafer on a substrate wafer using at least one laser. By setting the laser to a set of parameters that define a laser beam, the laser beam can avoid ablation of the substrate wafer. The laser beam is also set equal to, or within, an ablation threshold of the semiconductor wafer for selectively ablating the semiconductor wafer. The set of parameters includes wavelength, pulse width and pulse frequency.

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Patent Owner(s)

  • INTERNATIONAL BUSINESS MACHINES CORPORATION

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Budd, Russell A North Salem, US 99 1895
Dang, Bing Chappaqua, US 159 1444
Knickerbocker, John U Monroe, US 263 3938

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