Recessed source drain contact regions independent of device pitch by unmerged epitaxy on fin portions
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United States of America Patent
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Dec 15, 2015
Grant Date -
Nov 5, 2015
app pub date -
May 1, 2014
filing date -
May 1, 2014
priority date (Note) -
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status (Latency Note)
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Abstract
A semiconductor device fabrication process includes forming a plurality of fins upon a semiconductor substrate and forming a plurality of gate stacks upon the semiconductor substrate orthogonal to the plurality of fins, forming fin portions by recessing the plurality of fins and semiconductor substrate adjacent to the plurality of gate stacks, and forming uniform unmerged epitaxy upon the fin portions. A semiconductor device includes the plurality of fins, the plurality of gate stacks, a first semiconductor substrate recess between a first gate stack pair and a second semiconductor recess between a second gate stack pair, and unmerged epitaxy. The plurality of fins each include fin portions and the unmerged epitaxy including a first epitaxy pair contacting fin portions associated with the first gate stack pair and a second epitaxy pair contacting fin portions associated with the second gate stack pair.
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