Semiconductor device and method of manufacturing the same

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United States of America Patent

PATENT NO 9355900
APP PUB NO 20150325476A1
SERIAL NO

14803229

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Abstract

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A semiconductor device of an embodiment includes: a substrate on which a semiconductor circuit is formed; an interlayer insulating film in which a contact hole is formed on the substrate; a catalyst metal film on a side wall of the contact hole; catalyst metal particles on a bottom of the contact hole; graphene on the catalyst metal film; and carbon nanotubes, which penetrates the contact hole, on the catalyst metal particles.

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Patent Owner(s)

  • KABUSHIKI KAISHA TOSHIBA

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Katagiri, Masayuki Kanagawa, JP 103 1968
Sakai, Tadashi Kanagawa, JP 166 1887
Sakuma, Naoshi Kanagawa, JP 46 330
Suzuki, Mariko Kanagawa, JP 93 1852
Yamazaki, Yuichi Tokyo, JP 75 842

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