Method for manufacturing semiconductor device and semiconductor device
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United States of America Patent
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Feb 14, 2017
Grant Date -
Nov 12, 2015
app pub date -
Apr 30, 2015
filing date -
May 8, 2014
priority date (Note) -
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Abstract
A method for manufacturing a semiconductor device including a MOS transistor comprising forming a gate electrode on a first insulating film formed on a substrate, performing ion implantation into the substrate and forming a diffusion region, and forming a second insulating film on the substrate, in that order. The performing ion implantation comprises forming a first resist pattern, performing the ion implantation using the first resist pattern as a mask and removing the first resist pattern, including removing, by asking, a part of the first resist pattern hardened by the ion implantation and then removing the remaining part. In forming the gate electrode, a gate electrode material layer is patterned and a protective film is formed.
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