High electron mobility transistor (HEMT) capable of absorbing a stored hole more efficiently and method for manufacturing the same
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United States of America Patent
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Nov 1, 2016
Grant Date -
Nov 12, 2015
app pub date -
Jul 7, 2015
filing date -
Oct 31, 2012
priority date (Note) -
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Abstract
A semiconductor device includes a first semiconductor layer, a second semiconductor layer, a third semiconductor layer, a first electrode, a second electrode, a control electrode, and a third electrode. The second semiconductor layer is provided on the first semiconductor layer and has a band gap narrower than that of the first semiconductor layer. The second semiconductor layer includes a first portion and a second portion which is provided together with the first portion and contains an activated acceptor. The third semiconductor layer is provided on the first portion and has a band gap wider than or equal to the band gap of the second semiconductor layer. The first and the second electrodes are provided on the third semiconductor layer. The control electrode is provided between the first electrode and the second electrode. The third electrode is provided on the second portion.
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