Self-limiting silicide in highly scaled fin technology
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United States of America Patent
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Apr 12, 2016
Grant Date -
Nov 19, 2015
app pub date -
May 19, 2014
filing date -
May 19, 2014
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Abstract
A method of forming a metal semiconductor alloy on a fin structure that includes forming a semiconductor material layer of a polycrystalline crystal structure material or amorphous crystal structure material on a fin structure of a single crystal semiconductor material, and forming a metal including layer on the semiconductor material layer. Metal elements from the metal including layer may then be intermixed metal elements with the semiconductor material layer to provide a metal semiconductor alloy contact on the fin structure. A core of the fin structure of the single crystal semiconductor material is substantially free of the metal elements from the metal including layer.
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