Enhancing barrier in air gap technology

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United States of America Patent

PATENT NO 9263389
SERIAL NO

14277163

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Abstract

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A method of forming a semiconductor structure including a barrier layer between a metal line and an air gap oxide layer. The barrier layer may be formed in-situ or by a thermal annealing process and may prevent diffusion or electrical conduction.

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Patent Owner(s)

  • INTERNATIONAL BUSINESS MACHINES CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Lin, Wei Albany, US 534 4298
Nogami, Takeshi Schenectady, US 231 4170

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