Memory arrays

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United States of America Patent

PATENT NO 9287379
APP PUB NO 20150333143A1
SERIAL NO

14281569

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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Some embodiments include a memory array which has a stack of alternating first and second levels. Channel material pillars extend through the stack, and vertically-stacked memory cell strings are along the channel material pillars. A common source is under the stack and electrically coupled to the channel material pillars. The common source has conductive protective material over and directly against metal silicide, with the conductive protective material being a composition other than metal silicide. Some embodiments include methods of fabricating integrated structures.

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Patent Owner(s)

  • MICRON TECHNOLOGY, INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Haller, Gordon A Boise, US 82 1945
Hopkins, John D Boise, US 235 644
Hu, Yushi Boise, US 88 562
Klein, Rita J Boise, US 83 850
Meldrim, John M Boise, US 20 106
Tran, Luan C Meridian, US 176 3483
Zhu, Hongbin Boise, US 110 872

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