SUBSTRATELESS POWER DEVICE PACKAGES

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United States of America Patent

SERIAL NO

14818128

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Abstract

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A vertical conductive power semiconductor device may include a substrate with a top metal layer located on a top surface of the substrate, solder bumps deposited on top of the top metal layer, and wafer level molding surrounding the solder bumps and leaving the solder bumps at least partly exposed.

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Patent Owner(s)

Patent OwnerAddress
ALPHA AND OMEGA SEMICONDUCTOR INCORPORATED475 OAKMEAD PARKWAY SUNNYVALE CA 94085

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Feng, Tao Santa Clara, US 177 1037
Gong, Yuping Shanghai, CN 23 203
Ho, Yueh-Se Sunnyvale, US 113 2197
Huang, Ping Shanghai, CN 167 2528
Niu, Zhiqiang Shanghai, CN 48 220
Shi, Lei Shanghai, CN 557 2723
Wu, Ruisheng Shanghai, CN 10 102

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