SUBSTRATELESS POWER DEVICE PACKAGES

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United States of America Patent

SERIAL NO

14818128

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Abstract

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A vertical conductive power semiconductor device may include a substrate with a top metal layer located on a top surface of the substrate, solder bumps deposited on top of the top metal layer, and wafer level molding surrounding the solder bumps and leaving the solder bumps at least partly exposed.

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Patent Owner(s)

Patent OwnerAddress
ALPHA AND OMEGA SEMICONDUCTOR INCORPORATED475 OAKMEAD PKWY SUNNYVALE CA 94085

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Feng, Tao Santa Clara, US 162 915
Gong, Yuping Shanghai, CN 23 180
Ho, Yueh-Se Sunnyvale, US 113 2132
Huang, Ping Shanghai, CN 160 2281
Niu, Zhiqiang Shanghai, CN 41 190
Shi, Lei Shanghai, CN 497 2378
Wu, Ruisheng Shanghai, CN 10 88

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