Incoherent type-III materials for charge carriers control devices
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United States of America Patent
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Aug 6, 2019
Grant Date -
Nov 26, 2015
app pub date -
Feb 27, 2014
filing date -
Feb 27, 2013
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Abstract
A semiconductor junction may include a first semiconductor material and a second material. The first and the second semiconductor materials are extrinsically undoped. At least a portion of a valence band of the second material has a higher energy level than at least a portion of the conduction band of the first semiconductor material (type-III band alignment). A flow of a majority of free carriers across the semiconductor junction is diffusive. A region of generation and/or recombination of a plurality of free carriers is confined to a two-dimensional surface of the second material, and at the interface of the first semiconductor material and the second material.
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