SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

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United States of America Patent

SERIAL NO

14814003

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Abstract

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A semiconductor device manufacturing method includes forming a gate opening in a semiconductor layer; forming a sacrificial gate in the gate opening; forming a source region and a drain region in the semiconductor layer in proximity to the gate opening; removing the sacrificial gate; and forming a gate stack comprising a replacement gate dielectric layer and a replacement gate conductor layer in the gate opening, wherein the gate opening is configured to define a thickness of a portion of the semiconductor layer for a channel region. Channel control in semiconductor devices formed according to the above method can be effectively improved.

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Patent Owner(s)

Patent OwnerAddress
THE INSTITUTE OF MICROELECTRONICS CHINESE ACADEMY OF SCIENCESNO 3 BEITUCHENG WEST ROAD CHAO YANG DISTRICT BEIJING 100029

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
TANG, Zhaoyun Beijing, CN 5 7
YAN, Jiang Beijing, CN 60 763

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