METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND DEVICE
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United States of America Patent
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Nov 26, 2015
app pub date -
May 14, 2015
filing date -
May 21, 2014
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Abstract
A method for manufacturing a semiconductor device includes: forming a temporary gate electrode and a first dummy gate electrode located on a first side of the temporary gate electrode, on a semiconductor region with a first lattice constant; forming a first semiconductor layer with a second lattice constant different from the first lattice constant, between the temporary gate electrode and the first dummy gate electrode; removing the temporary gate electrode while leaving the first dummy gate electrode intact; and forming a gate electrode in a region from which the temporary gate electrode is removed.
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