METHOD FOR FORMING CHALCOGENIDE LAYERS

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United States of America Patent

APP PUB NO 20150340525A1
SERIAL NO

14697344

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Abstract

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A method is provided for forming on a substrate a chalcogenide layer, the chalcogenide layer containing at least two metallic elements and containing Se. The method comprises depositing on the substrate a metallic layer containing the at least two metallic elements; and annealing the metallic layer in an environment comprising both a S-containing vapor such as H2S vapor and a Se-containing vapor such as H2Se vapor, thereby forming the chalcogenide layer. The annealing may for example be done at a temperature in the range between 450° C. and 550° C., resulting in a layer with good morphological quality and large grain size, the layer being free of S. A method of the various embodiments may for example be used for forming an absorber layer of a photovoltaic cell.

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Patent Owner(s)

Patent OwnerAddress
IMEC VZWKAPELDREEF 75 LEUVEN 3001
UNIVERSITEIT HASSELTMARTELARENLAAN 42 HASSELT 3500
KING ABDULAZIZ CITY FOR SCIENCE AND TECHNOLOGYP O BOX 6086 RIYADH 11442

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Oueslati, Souhaib Tunis, US 1 0

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