NANOWIRE DEVICE WITH ALUMINA PASSIVATION LAYER AND METHODS OF MAKING SAME
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United States of America Patent
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Issued Date -
Nov 26, 2015
app pub date -
Aug 3, 2015
filing date -
Jan 18, 2011
priority date (Note) -
Abandoned
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Abstract
In one aspect, the present disclosure relates to a device including a silicon substrate, wherein at least a portion of the substrate surface can be a silicon nanowire array; and a layer of alumina covering the silicon nanowire array. In some embodiments, the device can be a solar cell. In some embodiments, the device can be a p-n junction. In some embodiments, the p-n junction can be located below the bottom surface the nanowire array.
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