METHODS FOR FABRICATING INTEGRATED CIRCUITS WITH NONVOLATILE MEMORY DEVICES
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United States of America Patent
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Issued Date -
Dec 3, 2015
app pub date -
Jun 3, 2014
filing date -
Jun 3, 2014
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Abstract
Methods for fabricating integrated circuits are provided. An exemplary method for fabricating an integrated circuit includes forming a stack gate structure overlying a semiconductor substrate. The method forms a select gate material overlying the stack gate structure and the semiconductor substrate and having a planar surface overlying the stack gate structure. The method includes anisotropically etching the select gate material to define a select gate adjacent the stack gate structure, wherein the select gate is formed with a planar upper surface.
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