METHOD FOR PRODUCING NITRIDE CRYSTAL
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United States of America Patent
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Issued Date -
Dec 10, 2015
app pub date -
Aug 20, 2015
filing date -
Mar 22, 2011
priority date (Note) -
Abandoned
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Abstract
A method for producing a nitride crystal, comprising growing a nitride crystal on the surface of a seed crystal put in a reactor while the temperature and the pressure inside the reactor that contains, as put thereinto, a seed crystal having a hexagonal-system crystal structure, a nitrogen-containing solvent, a starting material, and a mineralizing agent containing fluorine and at least one halogen element selected from chlorine, bromine and iodine are so controlled that the solvent therein could be in a supercritical state and/or a subcritical state to thereby grow a nitride crystal on the surface of the seed crystal in the reactor.
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