Etching Apparatus Using Inductively Coupled Plasma

Number of patents in Portfolio can not be more than 2000

United States of America Patent

APP PUB NO 20150359079A1
SERIAL NO

14598313

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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An etching apparatus may include a chuck, an antenna and a dielectric window. A substrate may be placed on an upper surface of the chuck. The antenna may be arranged over the chuck to form an inductive electromagnetic field between the antenna and the chuck. The dielectric window may be arranged between the antenna and the chuck to transmit the inductive electromagnetic field to the substrate. The dielectric window may have at least two receiving spaces into which an etching gas may be introduced, and a plurality of injecting holes connected to the receiving spaces to inject the etching gas toward the substrate. Thus, the flux or flow rate of the etching gas supplied to the substrate may be selectively controlled.

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Patent Owner(s)

Patent OwnerAddress
SAMSUNG ELECTRONICS CO LTDSUWON-SI

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Sun, Jong-Woo Seoul, KR 10 28

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