Etching Apparatus Using Inductively Coupled Plasma
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United States of America Patent
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Issued Date -
Dec 10, 2015
app pub date -
Jan 16, 2015
filing date -
Jun 9, 2014
priority date (Note) -
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Abstract
An etching apparatus may include a chuck, an antenna and a dielectric window. A substrate may be placed on an upper surface of the chuck. The antenna may be arranged over the chuck to form an inductive electromagnetic field between the antenna and the chuck. The dielectric window may be arranged between the antenna and the chuck to transmit the inductive electromagnetic field to the substrate. The dielectric window may have at least two receiving spaces into which an etching gas may be introduced, and a plurality of injecting holes connected to the receiving spaces to inject the etching gas toward the substrate. Thus, the flux or flow rate of the etching gas supplied to the substrate may be selectively controlled.
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