TA BASED AU-FREE OHMIC CONTACTS IN ADVANCED AIGAN/GAN BASED HFETS AND/OR MOSHFETS FOR POWER SWITCH APPLICATIONS
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United States of America Patent
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Issued Date -
Dec 17, 2015
app pub date -
Jun 11, 2014
filing date -
Jun 11, 2014
priority date (Note) -
Abandoned
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Abstract
A method of forming an Ohmic contact including forming a Ta layer in a contact area of a barrier layer by evaporation at an evaporation rate of 1 Å/second, forming a Ti layer on the first Ta layer, and forming an Al layer on the Ti layer, wherein the barrier layer comprises AlGaN having a 25% Al composition and a thickness in a range between 30 Å to 100 Å, and wherein the barrier layer is on a channel layer comprising GaN.
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