Importance

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Abstract

Provided is a gas phase etching apparatus. The gas phase etching apparatus includes a process chamber having an inner space that is defined by a chamber body having an opened upper portion and an upper dome having an opened lower portion and detachably coupled to an upper portion of the chamber body, a substrate susceptor disposed in the inner space to ascend and descend by a driving unit, and a ring plate disposed on the substrate susceptor to cover a space between the substrate susceptor and an outer wall of the process chamber so that the inner space is partitioned into a process region defined above the substrate susceptor and an exhaust region defined below the substrate susceptor. The process region partitioned by the ring plate is surrounded by the upper dome, and the exhaust region is surrounded by the chamber body.

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First Claim