Importance

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Abstract

The invention relates to a device (10) including a plurality of thin layers (12, 14, 18) comprising a layer (14) formed with a polarizable ferroelectric material according to several polarization directions depending on an electric voltage applied to said layer of ferroelectric material, surrounded by a pair of conductive layers (12, 18) forming electrodes. The device of the invention comprises an intermediate layer (16) between said ferroelectric material layer (14) and one of the conductive layers (12, 18), said intermediate layer (16) consisting of a material for which the electronic properties are modified according to the direction of polarization in said adjacent ferroelectric material layout (14). The device for the invention finds particularly advantageous applications as a memory element of a non-volatile memory, as an element of a programmable logic circuit and as a microswitch.

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First Claim