Importance

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Abstract

A method for forming integrated circuit includes providing a first semiconductor substrate having a front surface and a back surface that is opposite to the front surface. One or more first trenches are in the first semiconductor substrate from the front surface side, the first trenches being characterized by a first depth. One or more second trenches are formed in the first semiconductor substrate from the front surface side, the second trenches being characterized by a second depth which greater than the first depth. A horizontal isolation layer is formed parallel to the front surface and at a third depth from the front surface. The method also includes forming a first recessed region extending in the first semiconductor substrate from the back surface side to the horizontal isolation layer that results in a thinned semiconductor region having a thickness substantially equal to the third depth. The method further includes forming a bulk dielectric layer covering the back surface side of the first semiconductor substrate.

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First Claim