GaN SUBSTRATE, AND METHOD FOR MANUFACTURING GaN SUBSTRATE

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United States of America Patent

APP PUB NO 20150368832A1
SERIAL NO

14766400

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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Provided is a technology capable of simply manufacturing a GaN substrate, which is constituted by a GaN crystal having a substantially uniform dislocation density distribution, without using a complicated process, at low cost and at a high yield ratio.

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Patent Owner(s)

Patent OwnerAddress
DISCO CORPORATION13-11 OMORI-KITA 2-CHOME OTA-KU TOKYO 143-8580
NAMIKI SEIMITSU HOUSEKI KABUSIHIKI KAISHA8-22 SHINDEN 3-CHOME ADACHI-KU TOKYO 123-8511

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
AIDA, Hideo Tokyo, JP 20 72
AOTA, Natsuko Tokyo, JP 11 51
IKEJIRI, Kenjiro Tokyo, JP 7 3
KIM, Seongwoo Tokyo, JP 35 112
KOYAMA, Koji Tokyo, JP 45 843
TAKEDA, Hidetoshi Tokyo, JP 43 673
UEKI, Atsushi Tokyo, JP 20 49

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