METHOD OF FORMING SEMICONDUCTOR THIN FILM

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United States of America Patent

SERIAL NO

14839290

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Abstract

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Provided is a method of forming a semiconductor thin film. The method may include forming, on a substrate, a thin film that contains one of Ge, Si, and a SiGe mixture, and Sn in a content of 0.1 atomic % or more to 20 atomic % or less, and applying pulsed laser light to the thin film.

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Patent Owner(s)

Patent OwnerAddress
KYUSHU UNIVERSITY NATIONAL UNIVERSITY CORPORATION744 MOTOOKA NISHI-KU FUKUOKA-SHI FUKUOKA 819-0395
GIGAPHOTON INC400 OAZA YOKOKURASHINDEN OYAMA-SHI TOCHIGI 323-8558
NAGOYA UNIVERSITY NATIONAL UNIVERSITY CORPORATION1 FUROCHO CHIKUSA-KU NAGOYA-SHI AICHI 464-0814

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
IKENOUE, Hiroshi Fukuoka, JP 21 144
KUROSAWA, Masashi Aichi, JP 10 18
NAKATSUKA, Osamu Aichi, JP 6 40
TAOKA, Noriyuki Aichi, JP 10 450
ZAIMA, Shigeaki Aichi, JP 8 17

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