SEMICONDUCTOR DEVICES HAVING FINS, AND METHODS OF FORMING SEMICONDUCTOR DEVICES HAVING FINS
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United States of America Patent
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Issued Date -
Dec 24, 2015
app pub date -
Jun 18, 2014
filing date -
Jun 18, 2014
priority date (Note) -
Abandoned
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Abstract
Methods and structures associated with forming finFETs that have fin pitches less than 30 nm are described. A selective nitridation process may be used during spacer formation on the gate to enable finer fin pitch than could be achieved using traditional spacer deposition processes. The spacer formation may also allow precise control over formation of source and drain junctions.
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