METHOD FOR MANUFACTURING MOSFET

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United States of America Patent

APP PUB NO 20150380297A1
SERIAL NO

14759324

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Abstract

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Provided is a method for manufacturing a MOSFET, comprising: epitaxially growing a first semiconductor layer on a semiconductor substrate; epitaxially growing a second semiconductor layer on the first semiconductor layer; forming a shallow trench isolation in the first semiconductor layer and the second semiconductor layer to define an active region for the MOSFET; forming on the second semiconductor layer a gate stack and a spacer surrounding the gate stack; forming openings in the second semiconductor layer using the shallow trench isolation, the gate stack and the spacer as a hard mask; epitaxially growing, in each of the openings, a third semiconductor layer using a bottom surface and sidewalls of the opening as a growth seed layer, wherein the third semiconductor layer comprises a material different from that of the second semiconductor layer; and performing ion implantation into the third semiconductor layer to form source and drain regions.

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Patent Owner(s)

Patent OwnerAddress
THE INSTITUTE OF MICROELECTRONICS CHINESE ACADMY OF SCIENCESNO 3 BIETUCHENG WEST ROAD CHAOYANG DISTRICT BEIJING 100029

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
QIN, Changliang Beijing, CN 13 124
YIN, Haizhou Poughkeepsie, US 241 2072
ZHU, Huilong Poughkeepsie, US 589 8348

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