SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME

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United States of America Patent

APP PUB NO 20150380411A1
SERIAL NO

14419296

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Abstract

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The present invention provides a semiconductor structure, which comprises a semiconductor substrate and at least two semiconductor fins located on the semiconductor substrate, wherein: the at least two semiconductor fins are parallel to each other; and the parallel sidewall surfaces of the at least two semiconductor fins have different crystal planes. The present invention further provides a method for manufacturing aforesaid semiconductor structure. The technical solution provided in the present invention exhibits following advantages: it makes possible to form two parallel semiconductor fins with different sidewall crystal planes on the same substrate through changing crystal orientation of a part of the substrate; the two semiconductor fins individually have {100} sidewall crystal plane and {110} sidewall crystal plane, and are applied for forming NMOS and PMOS devices respectively; in this way, the overall performance of CMOS circuits is improved; besides, the two semiconductor fin structures are parallel to each other, such that it becomes less difficult to perform lithography and avoids wasting of wafer area.

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Patent Owner(s)

Patent OwnerAddress
INSTITUTE OF MICROELECTRONICS CHINESE ACADEMY OF SCIENCES100029 BEIJING CITY CHAOYANG DISTRICT BEITUCHENG WEST ROAD NO 3 CHINESE ACADEMY OF SCIENCES INSTITUTE OF MICROELECTRONICS MUNICIPAL DISTRICT BEIJING CITY 100029

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Liu, Yunfei Beijing, CN 6 9
Yin, Haizhou Poughkeepsie, US 241 2072

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