METAL BACKED NANOWIRE ARRAYS

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United States of America Patent

APP PUB NO 20150380740A1
SERIAL NO

14758091

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Abstract

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In an aspect of this disclosure, a structure is provided comprising a metallic holding layer and an array of semiconductor nanowires. A portion of each semiconductor nanowire is embedded in the metallic holding layer. The embedded nanowires do not penetrate through the metallic holding layer. The metallic holding layer makes electrical contact to the semiconductor nanowires.

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Patent Owner(s)

Patent OwnerAddress
ADVANCED SILICON GROUP INC173 BEDFORD ROAD LINCOLN MA 01773

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Black, Marcie R Salem, US 46 490
Jura, Michael Salem, US 14 35
Miller, Jeff Salem, US 91 2264
Murphy, Brian Salem, US 202 6619
Standley, Adam Cambridge, US 16 153
Yim, Joanne Salem, US 11 24

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