INGAAS FINFET ON PATTERNED SILICON SUBSTRATE WITH INP AS A BUFFER LAYER
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United States of America Patent
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Issued Date -
Jan 7, 2016
app pub date -
Mar 12, 2015
filing date -
Jul 2, 2014
priority date (Note) -
Abandoned
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Abstract
A method for manufacturing a semiconductor device includes providing a substrate having an array of cavities. Each of the cavities has a plurality of lateral sides, and each lateral side has a lateral direction matching a lateral crystal plane of the substrate. The method also includes forming a buffer layer on the substrate and filling the cavities, and forming a fin-type channel layer on the buffer layer. Because the independently grown crystals in the cavities have a lateral direction in line with the direction of the lateral crystal plane, the dislocation defect density is significantly reduced, thereby greatly improving the device performance.
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