FinFET with constrained source-drain epitaxial region

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United States of America Patent

PATENT NO 9536879
SERIAL NO

14326745

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Abstract

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A method includes forming a plurality of fins on a substrate, a gate is formed over a first portion of the plurality of fins with a second portion of the plurality of fins remaining exposed. Spacers are formed on opposite sidewalls of the second portion of the plurality of fins. The second portion of the plurality fins is removed to form a trench between the spacers. An epitaxial layer is formed in the trench. The spacers on opposite sides of the epitaxial layer constrain lateral growth of the epitaxial layer.

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Patent Owner(s)

  • INTERNATIONAL BUSINESS MACHINES CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Greene, Brian J Wappingers Falls, US 85 1475
Kumar, Arvind Beacon, US 309 3363
Mocuta, Dan M Lagrangeville, US 22 1564

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