CAPACITOR AND METHOD OF MANUFACTURING THE SAME

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United States of America Patent

SERIAL NO

14860703

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Abstract

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A capacitor includes a substrate, a multilayer over the substrate, a plurality of container-shaped storage node structures on the semiconductor substrate and surrounded by the multilayer, the storage node structure has a sidewall extending upwardly from the base to the top, where the sidewall includes an upper segment and a lower segment thinner than the upper segment, a capacitor dielectric material along a surface of each storage node structure, and a capacitor electrode material over the capacitor dielectric material.

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Patent Owner(s)

Patent OwnerAddress
NANYA TECHNOLOGY CORPHWA-YA TECHNOLOGY PARK 669 FUHSING 3 RD KUEISHAN TAO-YUAN HSIEN

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Blessing, Chad Patrick Boise, US 2 8
Busch, Brett W Boise, US 17 313
Funston, Greg Allen Boise, US 2 8
Li, Jian Boise, US 590 14104
Sapra, Sanjeev Boise, US 34 174

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