Semiconductor device and method of manufacturing the same
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United States of America Patent
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Jun 20, 2017
Grant Date -
Jan 14, 2016
app pub date -
Jul 6, 2015
filing date -
Jul 10, 2014
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Abstract
A semiconductor device of an embodiment includes an oxide semiconductor layer including a first region, a second region and the third region provided between the first region and the second region. The oxide semiconductor layer contains indium (In), gallium (Ga), and zinc (Zn). The first and second regions have thinner film thickness and lower indium (In) concentration than the third region. An insulating film is provided on the third region, and an electrode is provided on the insulating film. A first conductive layer is provided under the first region and electrically connected with the first region. A second conductive layer is provided under the second region and electrically connected with the second region.
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