SOLID-STATE IMAGING DEVICE AND METHOD FOR MANUFACTURING SOLID-STATE IMAGING DEVICE
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United States of America Patent
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Issued Date -
Jan 14, 2016
app pub date -
May 20, 2015
filing date -
Jul 10, 2014
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
According to one embodiment, a solid-state imaging device includes a semiconductor layer, a charge transfer region, a floating diffusion (FD), and a reading gate. The semiconductor layer is provided with a photoelectric conversion element. The charge transfer region is formed on a surface of the semiconductor layer over a charge accumulation region in the photoelectric conversion element. The FD is provided on the charge transfer region to hold a charge transferred from the charge accumulation region. The reading gate is provided on a side surface of the FD and a side surface of the charge transfer region via an insulating film.
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