OXIDE LAYER AND PRODUCTION METHOD FOR OXIDE LAYER, AS WELL AS CAPACITOR, SEMICONDUCTOR DEVICE, AND MICROELECTROMECHANICAL SYSTEM PROVIDED WITH OXIDE LAYER
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United States of America Patent
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Jan 21, 2016
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Jan 6, 2014
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Mar 8, 2013
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Abstract
An oxide layer 30 according to the invention consists of bismuth (Bi) and niobium (Nb) (possibly including inevitable impurities). The oxide layer 30 also includes crystal phases of a pyrochlore crystal structure. The obtained oxide layer 30 includes oxide consisting of bismuth (Bi) and niobium (Nb) and has high permittivity that has never been achieved in the conventional technique.
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