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Abstract

A nonvolatile semiconductor memory device includes a plurality of memory strings including a plurality of memory transistors connected in series and a selection transistor disposed on either end of the plurality of memory transistors, which together form a memory cell. The memory transistors and the selection transistors each include a polysilicon layer formed on an insulating film as a channel region thereof. A drain region is in a first diffusion layer region in the polysilicon layer in a location adjacent to a selection transistor at a first end of the memory string, and a source region is in a second diffusion layer region in the polysilicon layer in a location adjacent to a selection transistor at a second end of the memory string. In at least one of the first and the second diffusion regions, the grain size of the polysilicon is smaller than in other portions of the polysilicon.

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First Claim