Schottky Diode and Method of Manufacturing the Same
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United States of America Patent
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Issued Date -
Jan 21, 2016
app pub date -
Apr 27, 2015
filing date -
Jul 17, 2014
priority date (Note) -
Abandoned
status (Latency Note)
Importance
Abstract
A Schottky diode includes a drift region of a first conductive type formed at a surface portion of a substrate, an insulating layer disposed on the substrate and having an opening exposing a portion of the drift region, and a titanium silicide layer disposed on the portion of the drift region exposed by the opening.
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