TRANSISTOR AND MANUFACTURING METHOD THEREOF
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United States of America Patent
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N/A
Issued Date -
Jan 21, 2016
app pub date -
Jul 1, 2015
filing date -
Jul 17, 2014
priority date (Note) -
Abandoned
status (Latency Note)
Importance
Abstract
A transistor including a substrate, a source, a drain, an active portion, a fin-shaped gate, and an insulation layer is provided. The source is located on the substrate. The drain is located on the substrate. The active portion connects the source and the drain. The fin-shaped gate wraps the active portion. A first portion of the insulation layer separates the fin-shaped gate from the active portion, a second portion of the insulation layer separates the fin-shaped gate from the substrate, a third portion of the insulation layer separates the fin-shaped gate from the source and from the drain, and a fourth portion of the insulation layer is located on a surface of the fin-shaped gate facing away from the active portion. The insulation layer is integrally formed. A manufacturing method of a transistor is also provided.
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