Method for manufacturing an insulated gate bipolar transistor

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United States of America Patent

PATENT NO 9722040
SERIAL NO

14867327

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Abstract

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Method for manufacturing an insulated gate bipolar transistor, which includes a drift layer of a first conductivity type between an emitter side, at which a gate and emitter electrode are arranged, and a collector side, at which a collector electrode is arranged including steps:

    providing a substrate of a second conductivity type,applying a dopant of the first conductivity type on the first side,creating a drift layer of the first conductivity type on the first layer,diffusing the ions such that a buffer layer is created, having a higher doping concentration than the drift layer,creating a base layer of the second conductivity type on the drift layer,creating an emitter layer of the first conductivity type on the base layer,thinning the substrate on the second side such that the remaining part of the substrate forms a collector layer.

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Patent Owner(s)

  • ABB SCHWEIZ AG;ABB TECHNOLOGY AG

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Andenna, Maxi Dättwil, CH 10 49
Rahimo, Munaf Uezwil, CH 76 223

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