FINFET WITH BACK-GATE
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United States of America Patent
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Issued Date -
Jan 21, 2016
app pub date -
Mar 13, 2014
filing date -
Mar 19, 2013
priority date (Note) -
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Abstract
The present invention relates to a double-gate finFET comprising: at least two fins (FIN) realizing a single channel; a back-gate (BG) placed between the fins; and a front-gate (FG), placed outside of the fins. Further, the invention relates to a manufacturing process, resulting in the double-gate finFET.
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